Source: Journal of Vacuum Science & Technology B. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
ABNT
MARTINI, S e MANZOLI, J E e QUIVY, Alain Andre. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, v. 28, n. 2, 2010Tradução . . Disponível em: https://doi.org/10.1116/1.3301612. Acesso em: 27 abr. 2024.APA
Martini, S., Manzoli, J. E., & Quivy, A. A. (2010). Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, 28( 2). doi:10.1116/1.3301612NLM
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2024 abr. 27 ] Available from: https://doi.org/10.1116/1.3301612Vancouver
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2024 abr. 27 ] Available from: https://doi.org/10.1116/1.3301612